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Infineon DF80R12W2H3FB11 product image
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Infineon DF80R12W2H3FB11RoHS

Manufacturer
Infineon
MPN
DF80R12W2H3FB11
LCSC Part #
C17271226
Packaging
Through Hole,62.8x56.7mm
Customer #
Key Attributes
IGBT 1.2kV 20A TH
Datasheetpdf iconInfineon DF80R12W2H3FB11

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
PackagingThrough Hole,62.8x56.7mm
Td(off)250ns
Pd - Power Dissipation20mW
Td(on)25ns
Current - Collector(Ic)20A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)130pF
IGBT Type-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1.00mA
Gate Charge(Qg)320nC
Operating Temperature-40℃~+150℃@(Tj)
Vce Saturation(VCE(sat))1.75V@20A,15V
Switching Energy(Eoff)800uJ
Turn-On Energy (Eon)260uJ
Input Capacitance(Cies)2.35nF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging15
Sales UnitPiece

Introduction

AI Translation

EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC

Features

AI Translation
  • CoolSiC (TM) Schottky Diode Gen 5
  • High Speed IGBT H3
  • Niedrige Schaltverluste
  • 3 kV AC 1min Isolationsfestigkeit
  • Al₂O₃ Substrat mit kleinem thermischen Widerstand
  • Integrierter NTC Temperatur Sensor
  • Kompaktes Design
  • PressFIT Verbindungstechnik

Applications

AI Translation
  • Solar Anwendungen
  • Solar applications
In-Stock: 288
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1+$ 45.4467$ 45.45
30+$ 43.8521$ 1315.56
Standard Packaging15/Full Tray
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