Infineon FS3L25R12W2H3B11
| Manufacturer | |
| MPN | FS3L25R12W2H3B11 |
| LCSC Part # | C17252031 |
| Packaging | Through Hole,62.8x56.7mm |
| Customer # | |
| Key Attributes | IGBT 1.2kV 25A TH |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/IGBT Modules | |
| Manufacturer | Infineon | |
| Packaging | Through Hole,62.8x56.7mm | |
| Td(off) | 240ns | |
| Pd - Power Dissipation | 175W | |
| Td(on) | 55ns | |
| Current - Collector(Ic) | 25A | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance(Cies) | 1.43nF@25V | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.25V@0.85mA | |
| Operating Temperature | -40℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.6V@25A,15V | |
| Switching Energy(Eoff) | 600uJ | |
| Turn-On Energy (Eon) | 670uJ |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 15 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- High speed IGBT H3
- Low inductive design
- Low switching losses
Applications
AI Translation
- 3- level- applications
- Solar applications
In-Stock: 166
166 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 44.9349 | $ 44.93 |
| 30+ | $ 43.3253 | $ 1299.76 |
Standard Packaging15/Full Tray | ||
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Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |



