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RENESAS HFA3102BZ product image
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RENESAS HFA3102BZRoHS

Manufacturer
RENESAS
MPN
HFA3102BZ
LCSC Part #
C17216689
Packaging
SOIC-14
Customer #
Key Attributes
12V 40 250mW 30mA NPN SOIC-14 Bipolar RF Transistors RoHS
Datasheetpdf iconRENESAS HFA3102BZ
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QtyUnit Price(Reference Only)Total Amount
1+$ 12.2748$ 12.27
200+$ 4.8986$ 979.72
500+$ 4.7342$ 2367.10
1,000+$ 4.6536$ 4653.60
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar RF Transistors
ManufacturerRENESAS
PackagingSOIC-14
Emitter-Base Voltage(Vebo)6V
Collector - Emitter Voltage VCEO12V
DC Current Gain40
Pd - Power Dissipation250mW
Operating Temperature-40℃~+85℃
Current - Collector(Ic)30mA
Transition frequency(fT)10GHz
typeNPN
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

The HFA3102 is a monolithic NPN transistor array configured as a dual differential amplifier with tail transistors. Fabricated on the Intersil bonded-wafer UHF-1 SOI process, the array achieves a very high fT (10GHz) while maintaining excellent hFE and VBE temperature matching characteristics. Collector leakage current is held below 0.01nA.

Features

AI Translation
  • High gain-bandwidth product (fT): 10GHz
  • High power gain-bandwidth product: 5GHz
  • High current gain (hFE): 70
  • Noise figure (transistor): 3.5dB
  • Low collector leakage current: <0.01nA
  • Excellent hFE and VBE matching
  • Pin-to-pin compatible with UPA102G
  • Available in lead-free + annealed version (RoHS compliant)

Applications

AI Translation

Single-balanced mixer, wideband amplifier stage, differential amplifier, multiplier, automatic gain control circuit