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DIODES DMN62D0UDWQ-7 product image
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DIODES DMN62D0UDWQ-7RoHS

Manufacturer
DIODES
MPN
DMN62D0UDWQ-7
LCSC Part #
C17215426
Packaging
SOT-363
Customer #
Key Attributes
350mA 410mW 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS
Datasheetpdf iconDIODES DMN62D0UDWQ-7
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.2328$ 0.23
200+$ 0.0929$ 18.58
500+$ 0.0898$ 44.90
1,000+$ 0.0883$ 88.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSOT-363
Current - Continuous Drain(Id)350mA
RDS(on)-
Pd - Power Dissipation410mW
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)32pF
Gate Charge(Qg)500pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)3.9pF
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Introduction

AI Translation

This MOSFET is designed to meet the stringent requirements of automotive applications. It complies with AEC-Q101 and supports PPAP, making it ideal for: motor control, power management functions

Features

AI Translation
  • Dual N-channel MOSFET
  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage current
  • Ultra-compact SMT package
  • ESD protection on gate
  • Fully lead-free and RoHS compliant
  • Halogen and antimony free, "Green" device

Applications

AI Translation
  • Motor control
  • Power management functions