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VISHAY SQJB60EP-T1_BE3 product image
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VISHAY SQJB60EP-T1_BE3RoHS

Manufacturer
VISHAY
MPN
SQJB60EP-T1_BE3
LCSC Part #
C17214643
Packaging
SO-8
Customer #
Key Attributes
30A 16mΩ@4.5V 48W 2.5V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SQJB60EP-T1_BE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.4905$ 1.49
200+$ 0.5953$ 119.06
500+$ 0.5746$ 287.30
1,000+$ 0.5651$ 565.10
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
PackagingSO-8
Current - Continuous Drain(Id)30A
RDS(on)16mΩ@4.5V
Pd - Power Dissipation48W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)40pF
Number2 N-Channel
Input Capacitance(Ciss)1.6nF
Gate Charge(Qg)30nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)660pF
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Introduction

AI Translation

Medium-level gate drive N-channel enhancement-mode FET in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the applicable AEC Q101 standard for high-performance automotive applications.

Features

AI Translation
  • TrenchFET Power MOSFET
  • AEC-Q101 Qualified
  • 100% Tested for Rg and UIS
  • RoHS Compliant
  • Halogen-Free
  • N-Channel MOSFET

Applications

AI Translation
  • 12 V automotive systems
  • Start-stop micro-hybrid applications
  • Electric and electro-hydraulic power steering systems
  • Transmission control
  • Motor, lamp, and solenoid control
  • Ultra-high-performance power switching