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Infineon IKW08T120 product image
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Infineon IKW08T120RoHS

Manufacturer
Infineon
MPN
IKW08T120
LCSC Part #
C168885
Packaging
TO-247-3
Customer #
Key Attributes
70W 16A 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS
Datasheetpdf iconInfineon IKW08T120

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/Single IGBTs
ManufacturerInfineon
PackagingTO-247-3
Pd - Power Dissipation70W
Td(off)450ns
Operating Temperature-40℃~+150℃
Td(on)40ns
Current - Collector(Ic)16A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)28pF
IGBT TypeFS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@0.3mA
Vce Saturation(VCE(sat))2.2V@8A,15V
Reverse Recovery Time(trr)80ns
Switching Energy(Eoff)700uJ
Turn-On Energy (Eon)670uJ
Input Capacitance(Cies)600pF
Gate Charge(Qg)53nC@15V
Output Capacitance(Coes)36pF
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging30
Sales UnitPiece

Introduction

AI Translation

Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP305D. Short circuit withstand time – 10μs. TrenchStop and Fieldstop technology for 1200 V applications offers very tight parameter distribution and high ruggedness, temperature stable behavior. NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat).

Features

AI Translation
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1 for target applications
  • Pb-free lead plating; RoHS compliant

Applications

AI Translation
  • Frequency Converters
  • Uninterrupted Power Supply
In-Stock: 2,624
2,624 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.9981$ 2.00
10+$ 1.8402$ 18.40
30+$ 1.5436$ 46.31
90+$ 1.4416$ 129.74
480+$ 1.3953$ 669.74
960+$ 1.3762$ 1321.15
Standard Packaging30/Full Tube
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