ST STD5NK50ZT4
| Manufacturer | |
| MPN | STD5NK50ZT4 |
| LCSC Part # | C165931 |
| Packaging | TO-252(DPAK) |
| Customer # | |
| Key Attributes | MOSFET N-CH 500V 4.4A TO-252(DPAK) |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 4.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 535pF | |
| Gate Charge(Qg) | 28nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 4.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 535pF | |
| Gate Charge(Qg) | 28nC@10V | |
| Type | N-Channel |
Introduction
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Features
- TYPICAL RDS(on)=1.22Ω
- EXTREMELY HIGH dv/dt CAPABILITY
- IMPROVED ESD CAPABILITY
- 100% AVALANCHE RATED
- GATE CHARGE MINIMIZED
- VERY LOW INTRINSIC CAPACITANCES
- VERY GOOD MANUFACTURING REPEATIBILITY
Applications
- HIGH CURRENT, HIGH SPEED SWITCHING
- IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
- LIGHTING
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7685 | $ 0.77 |
| 10+ | $ 0.6483 | $ 6.48 |
| 30+ | $ 0.5898 | $ 17.69 |
| 100+ | $ 0.5297 | $ 52.97 |
| 500+ | $ 0.4956 | $ 247.80 |
| 1,000+ | $ 0.4761 | $ 476.10 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 4.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 535pF | |
| Gate Charge(Qg) | 28nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-252(DPAK) | |
| Drain to Source Voltage | 500V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 4.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF | |
| RDS(on) | 1.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 535pF | |
| Gate Charge(Qg) | 28nC@10V | |
| Type | N-Channel |
Introduction
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Features
- TYPICAL RDS(on)=1.22Ω
- EXTREMELY HIGH dv/dt CAPABILITY
- IMPROVED ESD CAPABILITY
- 100% AVALANCHE RATED
- GATE CHARGE MINIMIZED
- VERY LOW INTRINSIC CAPACITANCES
- VERY GOOD MANUFACTURING REPEATIBILITY
Applications
- HIGH CURRENT, HIGH SPEED SWITCHING
- IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
- LIGHTING
C165931 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



