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ST STD35P6LLF6RoHS

Manufacturer
ST
MPN
STD35P6LLF6
LCSC Part #
C165929
Packaging
TO-252(DPAK)
Customer #
Key Attributes
MOSFET P-CH 60V 35A TO-252(DPAK)
Datasheetpdf iconST STD35P6LLF6
In-Stock: 1,211
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QtyUnit PriceTotal Amount
1+$ 1.2153$ 1.22
10+$ 0.9976$ 9.98
30+$ 0.8871$ 26.61
100+$ 0.7799$ 77.99
500+$ 0.7149$ 357.45
1,000+$ 0.6824$ 682.40
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingTO-252(DPAK)
Drain to Source Voltage60V
Output Capacitance(Coss)262pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)170pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)3.78nF
Gate Charge(Qg)30nC@4.5V
TypeP-Channel
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Introduction

AI Translation

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

AI Translation
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss

Applications

AI Translation
  • Switching applications