ST STF10N80K5
| Manufacturer | |
| MPN | STF10N80K5 |
| LCSC Part # | C163539 |
| Packaging | TO-220FP |
| Customer # | |
| Key Attributes | MOSFET N-CH 800V 9A TO-220FP |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Configuration | - | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 9A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.8pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 635pF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
AI Translation
- Industry’s lowest RDS(on) X area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
AI Translation
- Switching applications
In-Stock: 24
24 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.0425 | $ 2.04 |
| 10+ | $ 1.7544 | $ 17.54 |
| 50+ | $ 1.5742 | $ 78.71 |
| 100+ | $ 1.3907 | $ 139.07 |
| 500+ | $ 1.307 | $ 653.50 |
| 1,000+ | $ 1.2716 | $ 1271.60 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Configuration | - | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 53pF | |
| Current - Continuous Drain(Id) | 9A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.8pF | |
| RDS(on) | 600mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 635pF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Features
AI Translation
- Industry’s lowest RDS(on) X area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
Applications
AI Translation
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



