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NCE NCE30H29D product image
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NCE NCE30H29DRoHS

Manufacturer
NCEAsian Brands
MPN
NCE30H29D
LCSC Part #
C161842
Packaging
TO-263-2L
Customer #
Key Attributes
MOSFET N-CH 30V 290A TO-263-2L
Datasheetpdf iconNCE NCE30H29D
In-Stock: 1,378
1,378 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.2006$ 1.20
10+$ 0.9488$ 9.49
30+$ 0.8221$ 24.66
100+$ 0.697$ 69.70
500+$ 0.6223$ 311.15
800+$ 0.5833$ 466.64
Standard Packaging800/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerNCE
PackagingTO-263-2L
Drain to Source Voltage30V
Output Capacitance(Coss)1.672nF
Current - Continuous Drain(Id)290A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation270W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.873nF
Gate Charge(Qg)-
TypeN-Channel
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Introduction

AI Translation

The NCE30H29D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Features

AI Translation
  • VDS = 30V, ID = 290A, RDS(ON) < 1.8mΩ @ VGS = 10V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability

Applications

AI Translation
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply