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MICROCHIP 25LC256T-E/SNRoHS

Manufacturer
MPN
25LC256T-E/SN
LCSC Part #
C159741
Packaging
SOIC-8
Customer #
Key Attributes
256K SPI Bus Serial EEPROM
Datasheetpdf iconMICROCHIP 25LC256T-E/SN
In-Stock: 344
344 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.5219$ 2.52
10+$ 2.1612$ 21.61
30+$ 1.9353$ 58.06
100+$ 1.7046$ 170.46
500+$ 1.6006$ 800.30
1,000+$ 1.5551$ 1555.10
Standard Packaging3300/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerMICROCHIP
PackagingSOIC-8
Voltage - Supply2.5V~5.5V
Memory Size256Kbit
Operating temperature-40℃~+125℃
Clock Frequency10MHz
FeaturesHardware write protection function;Built-in write enable latch (WEL);Power-down/Power-up protection circuit
Data Retention - TDR (Year)200 Years
Write Cycle Time(tWC)5ms
Write Cycle Endurance1,000,000 cycles
InterfaceSPI

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3300
Sales UnitPiece

Introduction

AI Translation

The 25AA256/25LC256 (25xxx256*) are 256 Kbit Serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral Interface (SPl) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (Sl) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transitions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts. The 25XX256 is available in standard packages including 8-lead PDIP and SOIC, and advanced packaging including 8-lead DFN and 8-lead TSSOP.

Features

AI Translation
  • Max. Clock 10 MHz
  • Low-Power CMOS Technology
  • Max. Write Current: 5 mA at 5.5V, 10 MHz
  • Read Current: 6 mA at 5.5V, 10 MHz
  • Standby Current: 1 μA at 5.5V
  • 32,768x8 -bit Organization
  • 64-Byte Page
  • Self-Timed Erase and Write Cycles (5 ms max.)
  • Block Write Protection: Protect none, 1/4, 1/2 or all of array
  • Built-ln Write Protection: Power-on/off data protection circuitry, Write enable latch, Write-protect pin
  • Sequential Read
  • High Reliability: Endurance: 1,000,000 erase/write cycles, Data retention: >200 years, ESD protection: >4000V
  • Temperature Ranges Supported: Industrial (l): -40℃ to +85℃, Automotive (E): -40℃ to +125℃
  • Pb-Free and RoHS Compliant