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onsemi FDC6318P
| Manufacturer | |
| MPN | FDC6318P |
| LCSC Part # | C157543 |
| Packaging | SuperSOT-6 |
| Customer # | |
| Key Attributes | 2.5A 200mΩ@1.8V 960mW 1.5V 2 P-Channel SuperSOT-6 FET, MOSFET Arrays RoHS |
| Datasheet |  onsemi FDC6318P |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 2.5A | |
| RDS(on) | 200mΩ@1.8V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 12V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 2.5A | |
| RDS(on) | 200mΩ@1.8V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 12V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These P-channel MOSFETs rated at 1.8V are manufactured using Fairchild Semiconductor's advanced PowerTrench process, which has been specifically tuned to minimize on-resistance while maintaining low gate charge for superior switching performance.
Features
AI Translation
- -2.5 A, -12 V. R DS(ON) = 90 mΩ at VGS = -4.5 V
- RDS(ON) = 125 mΩ at VGS = -2.5 V
- RDS(ON) = 200 mΩ at VGS = -1.8 V
- High-performance trench technology for ultra-low RDS(ON)
- SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thickness)
Applications
AI Translation
- Power Management
- Load Switch
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.7376 | $ 0.74 |
| 10+ | $ 0.6272 | $ 6.27 |
| 30+ | $ 0.5719 | $ 17.16 |
| 100+ | $ 0.5167 | $ 51.67 |
| 500+ | $ 0.4842 | $ 242.10 |
| 1,000+ | $ 0.4679 | $ 467.90 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 2.5A | |
| RDS(on) | 200mΩ@1.8V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 12V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 2.5A | |
| RDS(on) | 200mΩ@1.8V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 12V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 8nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
These P-channel MOSFETs rated at 1.8V are manufactured using Fairchild Semiconductor's advanced PowerTrench process, which has been specifically tuned to minimize on-resistance while maintaining low gate charge for superior switching performance.
Features
AI Translation
- -2.5 A, -12 V. R DS(ON) = 90 mΩ at VGS = -4.5 V
- RDS(ON) = 125 mΩ at VGS = -2.5 V
- RDS(ON) = 200 mΩ at VGS = -1.8 V
- High-performance trench technology for ultra-low RDS(ON)
- SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thickness)
Applications
AI Translation
- Power Management
- Load Switch
C157543 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |