ST M93C66-RMN3TP/K

The M93C46 (1 Kbit), M93C56 (2 Kbit), M93C66 (4 Kbit), M93C76 (8 Kbit) and M93C86 (16 Kbit) are Electrically Erasable PROgrammable Memory (EEPROM) devices accessed through the MICROWIRE TM bus protocol. The memory array can be configured either in bytes (x8b) or in words (x16b). The M93Cx6-A125 devices operate within a voltage supply range from 1.8 V to 5.5 V. The M93Cx6-A125 devices are guaranteed over the -40 ℃/+125 ℃ temperature range and are compliant with the Automotive standard AEC-Q100 Grade 1. A Read Data from Memory (READ) instruction loads the address of the first byte or word to be read in an internal address register. The data at this address is then clocked out serially. The address register is automatically incremented after the data is output and, if Chip Select Input (S) is held High, the M93Cx6-A125 can output a sequential stream of data bytes or words. In this way, the memory can be read as a data stream from eight to 16384 bits long (in the case of the M93C86), or continuously (the address counter automatically rolls over to 00h when the highest address is reached). Programming is internally self-timed (the external clock signal on Serial Clock (C) may be stopped or left running after the start of a Write cycle) and does not require an Erase cycle prior to the Write instruction. The Write instruction writes 8 or 16 bits at a time into one of the byte or word locations of the M93Cx6-A125. After the start of the programming cycle, a Busy/Ready signal is available on Serial Data Output (Q) when Chip Select Input (S) is driven High. An internal Power-on Data Protection mechanism in the M93Cx6-A125 inhibits the device when the supply is too low.

• Industry standard MICROWIRETM bus
• Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb
• Dual organization: by word (x16) or byte (x8)
• Write - Byte within 4 ms; Word within 4 ms
• READY/BUSY signal during programming
• 2 MHz clock rate
• Sequential read operation
• Single supply voltage: 1.8 V to 5.5 V
• Operating temperature range: -40 ℃ up to 125 ℃
• Enhanced ESD protection
• Write cycle endurance:
  • 4 million Write cycles at 25 ℃
  • 1.2 million Write cycles at 85 ℃
  • 600 k Write cycles at 125 ℃
• Data retention:
  • 50 years at 125 ℃
  • more than 100 years at 25 ℃
• Packages RoHS-compliant and Halogen-free (ECOPACK2)