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DIODES DMN2014LHAB-7RoHS

Manufacturer
DIODES
MPN
DMN2014LHAB-7
LCSC Part #
C156328
Packaging
U-DFN2030-6B-EP
Customer #
Key Attributes
MOSFET N-CH ARR 20V 9A U-DFN2030-6B-EP
Datasheetpdf iconDIODES DMN2014LHAB-7
In-Stock: 860
860 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.2497$ 1.25
50+$ 0.202$ 10.10
150+$ 0.1816$ 27.24
500+$ 0.1562$ 78.10
3,000+$ 0.1448$ 434.40
6,000+$ 0.138$ 828.00
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingU-DFN2030-6B-EP
Current - Continuous Drain(Id)9A
RDS(on)28mΩ@1.8V
Pd - Power Dissipation1.7W
Gate Threshold Voltage (Vgs(th))1.1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)16nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-
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Introduction

AI Translation

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

AI Translation
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device Qualified to AEC-Q101 Standards for High Reliability

Applications

AI Translation
  • Power Management Functions
  • Battery Pack
  • Load Switch