DIODES DMN2300UFB4-7B
| Manufacturer | |
| MPN | DMN2300UFB4-7B |
| LCSC Part # | C154728 |
| Packaging | X2-DFN1006-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 1.3A X2-DFN1006-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | X2-DFN1006-3 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 9.7pF | |
| Current - Continuous Drain(Id) | 1.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 7.5pF | |
| RDS(on) | 175mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 67.6pF | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Applications
AI Translation
- Load Switch
In-Stock: 9,180
9,180 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0664 | $ 0.66 |
| 100+ | $ 0.0523 | $ 5.23 |
| 300+ | $ 0.0453 | $ 13.59 |
| 1,000+ | $ 0.04 | $ 40.00 |
| 5,000+ | $ 0.0358 | $ 179.00 |
| 10,000+ | $ 0.0337 | $ 337.00 |
Standard Packaging10000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | X2-DFN1006-3 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 9.7pF | |
| Current - Continuous Drain(Id) | 1.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 950mV | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 7.5pF | |
| RDS(on) | 175mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 67.6pF | |
| Gate Charge(Qg) | 1.6nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize on-resistance (RDS(ON)) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Applications
AI Translation
- Load Switch
C154728 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



