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onsemi FDC6401NRoHS

Manufacturer
onsemi
MPN
FDC6401N
LCSC Part #
C154559
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET N-CH ARR 20V 3A SuperSOT-6
Datasheetpdf icononsemi FDC6401N
In-Stock: 1,575
1,575 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3374$ 1.69
50+$ 0.2616$ 13.08
150+$ 0.2291$ 34.37
500+$ 0.1885$ 94.25
3,000+$ 0.1704$ 511.20
6,000+$ 0.1596$ 957.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSuperSOT-6
Current - Continuous Drain(Id)3A
RDS(on)95mΩ@2.5V
Pd - Power Dissipation960mW
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)42pF
Number2 N-Channel
Input Capacitance(Ciss)324pF
Gate Charge(Qg)3.3nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)82pF
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

AI Translation
  • 3.0 A, 20 V
  • RDS(ON) = 70 mΩ @ VGS = 4.5 V
  • RDS(ON) = 95 mΩ @ VGS = 2.5 V
  • Low gate charge (3.3 nC)
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications

AI Translation
  • DC/DC converter
  • Battery Protection
  • Power Management