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onsemi FDC6333CRoHS

Manufacturer
onsemi
MPN
FDC6333C
LCSC Part #
C154557
Packaging
SuperSOT-6
Customer #
Key Attributes
MOSFET N-CH+P-CH ARR 30V 2.5A SuperSOT-6
Datasheetpdf icononsemi FDC6333C
In-Stock: 450
450 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3566$ 1.78
50+$ 0.2878$ 14.39
150+$ 0.2583$ 38.75
500+$ 0.2215$ 110.75
3,000+$ 0.2052$ 615.60
6,000+$ 0.1953$ 1171.80
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSuperSOT-6
Current - Continuous Drain(Id)2.5A
RDS(on)220mΩ@4.5V
Pd - Power Dissipation960mW
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)26pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)282pF
Gate Charge(Qg)6.6nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)56pF
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Introduction

AI Translation

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features

AI Translation
  • These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
  • These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Applications

AI Translation
  • DC/DC converter
  • Load switch
  • LCD display inverter