onsemi FDS8447
| Manufacturer | |
| MPN | FDS8447 |
| LCSC Part # | C154555 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 40V 12.8A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 350pF | |
| Current - Continuous Drain(Id) | 12.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 10.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.6nF | |
| Gate Charge(Qg) | 49nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This single N-Channel MOSFET is produced using advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
AI Translation
- Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A
- Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A
- Low gate charge
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
Applications
AI Translation
- DC - DC conversion
In-Stock: 103
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.2851 | $ 2.29 |
| 10+ | $ 1.9987 | $ 19.99 |
| 30+ | $ 1.818 | $ 54.54 |
| 100+ | $ 1.6341 | $ 163.41 |
| 500+ | $ 1.5511 | $ 775.55 |
| 1,000+ | $ 1.5137 | $ 1513.70 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 40V | |
| Output Capacitance(Coss) | 350pF | |
| Current - Continuous Drain(Id) | 12.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF | |
| RDS(on) | 10.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.6nF | |
| Gate Charge(Qg) | 49nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This single N-Channel MOSFET is produced using advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Features
AI Translation
- Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A
- Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A
- Low gate charge
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability
Applications
AI Translation
- DC - DC conversion
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



