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onsemi FDS8447RoHS

Manufacturer
MPN
FDS8447
LCSC Part #
C154555
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH 40V 12.8A SO-8
Datasheetpdf icononsemi FDS8447
In-Stock: 103
103 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 2.2851$ 2.29
10+$ 1.9987$ 19.99
30+$ 1.818$ 54.54
100+$ 1.6341$ 163.41
500+$ 1.5511$ 775.55
1,000+$ 1.5137$ 1513.70
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSO-8
Drain to Source Voltage40V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)12.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)10.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.6nF
Gate Charge(Qg)49nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This single N-Channel MOSFET is produced using advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

AI Translation
  • Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A
  • Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A
  • Low gate charge
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability

Applications

AI Translation
  • DC - DC conversion