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onsemi FDN352AP
| Manufacturer | |
| MPN | FDN352AP |
| LCSC Part # | C154553 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 1.3A SOT-23 |
| Datasheet |  onsemi FDN352AP |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 1.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 300mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 150pF | |
| Gate Charge(Qg) | 1.9nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-channel logic-level MOSFET is manufactured using an advanced power trench process, specially optimized to minimize on-resistance while maintaining low gate charge for superior switching performance. These devices are ideal for low-voltage and battery-powered applications where low line power loss is required in a compact SMT package.
Features
AI Translation
- 1.3 A, -30V
- RDS(ON) = 180 mΩ at VGS = -10V
- -1.1 A, -30V
- RDS(ON) = 300 mΩ at VGS = -4.5V
- High-performance trench technology for ultra-low RDS(ON)
- High-power version of industry-standard SOT-23 package. Same pin configuration as SOT-23 with 30% improved power handling capability.
Applications
AI Translation
- Notebook power management
- SuperSOT™-3
In-Stock: 2,330
2,330 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1909 | $ 0.95 |
| 50+ | $ 0.1598 | $ 7.99 |
| 150+ | $ 0.1443 | $ 21.65 |
| 500+ | $ 0.1326 | $ 66.30 |
| 3,000+ | $ 0.1168 | $ 350.40 |
| 6,000+ | $ 0.1121 | $ 672.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 40pF | |
| Current - Continuous Drain(Id) | 1.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| RDS(on) | 300mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 150pF | |
| Gate Charge(Qg) | 1.9nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This P-channel logic-level MOSFET is manufactured using an advanced power trench process, specially optimized to minimize on-resistance while maintaining low gate charge for superior switching performance. These devices are ideal for low-voltage and battery-powered applications where low line power loss is required in a compact SMT package.
Features
AI Translation
- 1.3 A, -30V
- RDS(ON) = 180 mΩ at VGS = -10V
- -1.1 A, -30V
- RDS(ON) = 300 mΩ at VGS = -4.5V
- High-performance trench technology for ultra-low RDS(ON)
- High-power version of industry-standard SOT-23 package. Same pin configuration as SOT-23 with 30% improved power handling capability.
Applications
AI Translation
- Notebook power management
- SuperSOT™-3
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |