LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
onsemi FOD3120SD product image
  • FOD3120SD thumbnail 1
  • FOD3120SD thumbnail 2
  • FOD3120SD thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

onsemi FOD3120SDRoHS

Manufacturer
MPN
FOD3120SD
LCSC Part #
C15455
Packaging
SOP-8-2.54mm
Customer #
Key Attributes
High noise immunity, 2.5 A output current gate drive optocoupler
Datasheetpdf icononsemi FOD3120SD

Products Specifications

Show similar products (0) >
TypeDescription
CategoryIsolators/Isolators - Gate Drivers
Manufactureronsemi
PackagingSOP-8-2.54mm
Power Dissipation250mW
FeaturesUnder-voltage lockout
Output Current2.5A
Data Rate-
Operating Temperature-40℃~+100℃
Reverse Voltage5V
Voltage - Supply15V~30V
Forward Current(If)16mA
CMTI(kV/us)50kV/us
Number of Channels1
Input threshold current5mA
Propagation Delay(tpd)400ns;400ns
Voltage - Forward(Vf)1.5V
Isolation Voltage(Vrms)5kV
Input TypeDC

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

High Noise Immunity Characterized by 35 kV/μs Minimum Common Mode Rejection • 2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT Use of P-channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail • Wide Supply Voltage Range from 15 V to 30 V • Fast Switching Speed – 400 ns max. Propagation Delay – 100 ns max. Pulse Width Distortion Under Voltage LockOut (UVLO) with Hysteresis • Extended Industrial Temperate Range, -40°C to 100°C Temperature Range Safety and Regulatory Approved – UL1577, 5000 VRMS for 1 min. – DIN EN/IEC60747-5-5 • RDS(ON) of 1 Ω (typ.) Offers Lower Power Dissipation • >8.0 mm Clearance and Creepage Distance (Option ‘T’ or ‘TS’) • 1,414 V Peak Working Insulation Voltage (VIORM) The FOD3120 is a 2.5 A Output Current Gate Drive Optocoupler, capable of driving most medium power IGBT/MOSFET. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power system. It utilizes coplanar packaging technology, Optoplanar®, and optimized IC design to achieve high noise immunity, characterized by high common mode rejection. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically coupled to an integrated circuit with a high - speed driver for push - pull MOSFET output stage.

Features

AI Translation
  • High Noise Immunity Characterized by 35 kV/μs Minimum Common Mode Rejection
  • 2.5 A Peak Output Current Driving Capability for Most 1200 V/20 A IGBT
  • Use of P - channel MOSFETs at Output Stage Enables Output Voltage Swing Close to The Supply Rail
  • Wide Supply Voltage Range from 15 V to 30 V
  • Fast Switching Speed – 400 ns max. Propagation Delay
  • 100 ns max. Pulse Width Distortion
  • Under Voltage LockOut (UVLO) with Hysteresis
  • Extended Industrial Temperate Range, - 40°C to 100°C Temperature Range
  • Safety and Regulatory Approved – UL1577, 5000 VRMS for 1 min.
  • DIN EN/IEC60747 - 5 - 5
  • RDS(ON) of 1 Ω (typ.) Offers Lower Power Dissipation
  • 8.0 mm Clearance and Creepage Distance (Option ‘T’ or ‘TS’)

  • 1,414 V Peak Working Insulation Voltage (VIORM)

Applications

AI Translation
  • Industrial Inverter
  • Uninterruptible Power Supply
  • Induction Heating
  • Isolated IGBT/Power MOSFET Gate Drive
In-Stock: 22,799
22,799 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.9624$ 0.96
10+$ 0.7712$ 7.71
30+$ 0.6756$ 20.27
100+$ 0.58$ 58.00
500+$ 0.5243$ 262.15
1,000+$ 0.494$ 494.00
Standard Packaging1000/Full Reel
Better price for more quantity?
$