onsemi FDC6420C
| Manufacturer | |
| MPN | FDC6420C |
| LCSC Part # | C154515 |
| Packaging | SuperSOT-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 20V 3A SuperSOT-6 |
| Datasheet |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 3A | |
| RDS(on) | 190mΩ@2.5V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 337pF | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 88pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 3A | |
| RDS(on) | 190mΩ@2.5V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 337pF | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 88pF |
Introduction
These N & P-Channel MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
- Q1 3.0 A, 20V. RDS(ON)=70 mΩ @ VGS=4.5 V RDS(ON)=95 mΩ @ VGS=2.5 V
- Q2 –2.2 A, 20V. RDS(ON)=125 mΩ @ VGS=-4.5 V RDS(ON)=190 mΩ @ VGS=-2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON).
- SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
Applications
- DC/DC converter
- Load switch
- LCD display inverter
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5735 | $ 0.57 |
| 10+ | $ 0.4582 | $ 4.58 |
| 30+ | $ 0.4095 | $ 12.29 |
| 100+ | $ 0.3493 | $ 34.93 |
| 500+ | $ 0.3217 | $ 160.85 |
| 1,000+ | $ 0.3055 | $ 305.50 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 3A | |
| RDS(on) | 190mΩ@2.5V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 337pF | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 88pF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | SuperSOT-6 | |
| Current - Continuous Drain(Id) | 3A | |
| RDS(on) | 190mΩ@2.5V | |
| Pd - Power Dissipation | 960mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 20V |
| Type | Description | |
|---|---|---|
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 51pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 337pF | |
| Gate Charge(Qg) | 4.6nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 88pF |
Introduction
These N & P-Channel MOSFETs are produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Features
- Q1 3.0 A, 20V. RDS(ON)=70 mΩ @ VGS=4.5 V RDS(ON)=95 mΩ @ VGS=2.5 V
- Q2 –2.2 A, 20V. RDS(ON)=125 mΩ @ VGS=-4.5 V RDS(ON)=190 mΩ @ VGS=-2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON).
- SuperSOT –6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
Applications
- DC/DC converter
- Load switch
- LCD display inverter
C154515 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



