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Infineon IRFB4019PBFRoHS

Manufacturer
Infineon
MPN
IRFB4019PBF
LCSC Part #
C153238
Packaging
TO-220-3
Customer #
Key Attributes
150V 17A 4.9V 80W 95mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon IRFB4019PBF
In-Stock: 44
44 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.203$ 1.20
10+$ 0.9815$ 9.82
50+$ 0.7859$ 39.30
100+$ 0.6759$ 67.59
500+$ 0.6113$ 305.65
1,000+$ 0.5773$ 577.30
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220-3
ConfigurationHalf-Bridge
Drain to Source Voltage150V
Output Capacitance(Coss)74pF
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.9V
Pd - Power Dissipation80W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
Gate Charge(Qg)20nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This digital audio MOSFET is designed for Class D audio amplifier applications. The MOSFET employs the latest processing technology to achieve low on-resistance per unit silicon area. In addition, gate charge, body diode reverse recovery, and internal gate resistance have been optimized to improve key performance parameters of Class D audio amplifiers, such as efficiency, total harmonic distortion (THD), and EMI. Additional features of this MOSFET include a 175°C operating junction temperature and repetitive avalanche capability. Combined, these features make this MOSFET a highly efficient, robust, and reliable device for Class D audio amplifier applications.

Features

AI Translation
  • Key parameters optimized for Class-D audio amplifier applications
  • Low on-resistance (R<sub>DSON</sub>) for improved efficiency
  • Low gate charge (Q<sub>G</sub>) and switching charge (Q<sub>SW</sub>) for improved THD and efficiency
  • Low reverse recovery charge (Q<sub>RR</sub>) for improved THD and reduced EMI
  • 175°C operating junction temperature for enhanced durability
  • Up to 200W per channel into 8Ω loads in half-bridge amplifier configurations