onsemi FDV301N

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

• 25 V, 0.22 A continuous, 0.5 A Peak
• RDS(ON) = 5 Ω @ VGS = 2.7 V
• RDS(ON) = 4 Ω @ VGS = 4.5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits
• VGS(th) < 1.06 V
• Gate - Source Zener for ESD ruggedness

• GKV Human Body Model

• Replace multiple NPN digital transistors with one DMOS FET