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Infineon BAR6405WH6327XTSA1RoHS

Manufacturer
MPN
BAR6405WH6327XTSA1
LCSC Part #
C152641
Packaging
SOT-323-3
Customer #
Key Attributes
DIODE ARR STANDARD 150V 100mA SOT-323-3
Datasheetpdf iconInfineon BAR6405WH6327XTSA1
In-Stock: 100
100 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.6134$ 3.07
50+$ 0.5099$ 25.50
150+$ 0.4589$ 68.84
500+$ 0.4079$ 203.95
2,500+$ 0.377$ 942.50
5,000+$ 0.36$ 1800.00
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/RF Diodes
ManufacturerInfineon
PackagingSOT-323-3
Non-Repetitive Peak Forward Surge Current-
Current - Rectified100mA
Diode Configuration1 Pair Common Cathode
Operating Junction Temperature Range-55℃~+125℃
Reverse Leakage Current (Ir)20nA@20V
Voltage - Forward(Vf@If)1.1V@100mA
DC Reverse Voltage(Vr)150V

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold of large RF voltages, and is best suited for frequencies as high as 3 GHz. Its nominal 50 µm I-region width, combined with the typical 1.55 µs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics.

Features

AI Translation
  • Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical)
  • Very low capacitance C = 0.25 pF (typical) at voltage VR = 0 and frequencies f ≥ 1 GHz
  • Low forward resistance RF = 2.2 Ω (typical) at forward current IF = 10 mA and frequency f = 100 MHz
  • Industry standard SOT323-3 package (2.1 mm × 2 mm × 0.9 mm)
  • Pb-free, RoHS compliant and halogen-free

Applications

AI Translation
  • Optimized for low bias current RF and high-speed interface switches and attenuators
  • Wireless communication
  • High speed data networks