Infineon IPB200N15N3 G
| Manufacturer | |
| MPN | IPB200N15N3 G |
| LCSC Part # | C152433 |
| Packaging | TO-263-2 |
| Customer # | |
| Key Attributes | 150V 50A 4V 150W 20mΩ@10V 1 N-channel N-Channel TO-263-2 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-2 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 214pF | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.82nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (Figure of Merit, FOM)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free lead finish; RoHS compliant
- Qualified to JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 6.2959 | $ 6.30 |
| 10+ | $ 6.1674 | $ 61.67 |
| 30+ | $ 6.0801 | $ 182.40 |
| 100+ | $ 5.9944 | $ 599.44 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-2 | |
| Drain to Source Voltage | 150V | |
| Output Capacitance(Coss) | 214pF | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.82nF | |
| Gate Charge(Qg) | 31nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (Figure of Merit, FOM)
- Ultra-low on-resistance RDS(on)
- Operating temperature up to 175°C
- Lead-free lead finish; RoHS compliant
- Qualified to JEDEC standards for target applications
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free per IEC61249-2-21
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



