Infineon SPA11N80C3
| Manufacturer | |
| MPN | SPA11N80C3 |
| LCSC Part # | C152363 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 800V 11A TO-220-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 11A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 34W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 450mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.6nF | |
| Gate Charge(Qg) | 85nC@10V | |
| Type | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- New revolutionary high voltage technology
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- Ultra low gate charge
- Ultra low effective capacitances
- Fully isolated package (2500 VAC; 1 minute)
Applications
AI Translation
- Industrial application with high DC bulk voltage
- Switching Application ( i.e. active clamp forward )
In-Stock: 59
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.5956 | $ 3.60 |
| 10+ | $ 3.0531 | $ 30.53 |
| 50+ | $ 2.7299 | $ 136.50 |
| 100+ | $ 2.4051 | $ 240.51 |
| 500+ | $ 2.2546 | $ 1127.30 |
| 1,000+ | $ 2.1858 | $ 2185.80 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 65pF | |
| Current - Continuous Drain(Id) | 11A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3.9V | |
| Pd - Power Dissipation | 34W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 450mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.6nF | |
| Gate Charge(Qg) | 85nC@10V | |
| Type | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- New revolutionary high voltage technology
- Extreme dv/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Pb-free lead plating; RoHS compliant
- Ultra low gate charge
- Ultra low effective capacitances
- Fully isolated package (2500 VAC; 1 minute)
Applications
AI Translation
- Industrial application with high DC bulk voltage
- Switching Application ( i.e. active clamp forward )
C152363 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



