micron MT47H64M16NF-25E IT:M
| Manufacturer | |
| MPN | MT47H64M16NF-25E IT:M |
| LCSC Part # | C151066 |
| Packaging | FBGA-84 |
| Customer # | |
| Key Attributes | 1Gb:x4,x8,x16 DDR2 SDRAM |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | micron | |
| Packaging | FBGA-84 | |
| Refresh Current | 2mA | |
| Voltage - Supply | 1.7V~1.9V | |
| Memory Size | 1Gbit | |
| Operating temperature | -40℃~+95℃ | |
| Clock Frequency | 400MHz | |
| Features | Auto precharge function;Data mask function;Dynamic on-chip termination | |
| Memory Format | DDR2 SDRAM | |
| Current - Supply | 60mA |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V
- JEDEC-standard 1.8V I/O (SSTL_18-compatible)
- Differential data strobe (DQS, DQS#) option
- 4n-bit prefetch architecture
- Duplicate output strobe (RDQS) option for x8
- DLL to align DQ and DQS transitions with CK
- 8 internal banks for concurrent operation
- Programmable CAS latency (CL)
- Posted CAS additive latency (AL)
- WRITE latency = READ latency - 1 CK
- Selectable burst lengths (BL): 4 or 8
- Adjustable data-output drive strength
- 64ms, 8192-cycle refresh
- On-die termination (ODT)
- Industrial temperature (IT) option
- Automotive temperature (AT) option
- RoHS-compliant
- Supports JEDEC clock jitter specification
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 10.1492 | $ 10.15 |
| 10+ | $ 8.6761 | $ 86.76 |
| 30+ | $ 7.778 | $ 233.34 |
| 100+ | $ 6.706 | $ 670.60 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | micron | |
| Packaging | FBGA-84 | |
| Refresh Current | 2mA | |
| Voltage - Supply | 1.7V~1.9V | |
| Memory Size | 1Gbit | |
| Operating temperature | -40℃~+95℃ | |
| Clock Frequency | 400MHz | |
| Features | Auto precharge function;Data mask function;Dynamic on-chip termination | |
| Memory Format | DDR2 SDRAM | |
| Current - Supply | 60mA |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V
- JEDEC-standard 1.8V I/O (SSTL_18-compatible)
- Differential data strobe (DQS, DQS#) option
- 4n-bit prefetch architecture
- Duplicate output strobe (RDQS) option for x8
- DLL to align DQ and DQS transitions with CK
- 8 internal banks for concurrent operation
- Programmable CAS latency (CL)
- Posted CAS additive latency (AL)
- WRITE latency = READ latency - 1 CK
- Selectable burst lengths (BL): 4 or 8
- Adjustable data-output drive strength
- 64ms, 8192-cycle refresh
- On-die termination (ODT)
- Industrial temperature (IT) option
- Automotive temperature (AT) option
- RoHS-compliant
- Supports JEDEC clock jitter specification
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |



