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onsemi MBR360GRoHS

Manufacturer
onsemi
MPN
MBR360G
LCSC Part #
C150251
Packaging
DO-201AD
Customer #
Key Attributes
DIODE SCHOTTKY 60V DO-201AD
Datasheetpdf icononsemi MBR360G
In-Stock: 1,426
1,426 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.4805$ 0.48
10+$ 0.3762$ 3.76
30+$ 0.3306$ 9.92
100+$ 0.2753$ 27.53
500+$ 0.2492$ 124.60
1,000+$ 0.2346$ 234.60
Standard Packaging500/Full Bag
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
Manufactureronsemi
PackagingDO-201AD
Diode Configuration1 Independent
Operating Junction Temperature Range-65℃~+150℃
Voltage - DC Reverse (Vr) (Max)60V
Voltage - Forward(Vf@If)740mV@3A
Reverse Leakage Current (Ir)600uA@60V
Non-Repetitive Peak Forward Surge Current80A
Current - Rectified3A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging500
Sales UnitPiece

Introduction

AI Translation

These devices employ the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes.

Features

AI Translation
  • Extremely Low vF
  • Low Power Loss/High Efficiency
  • Highly Stable Oxide Passivated Junction
  • Low Stored Charge, Majority Carrier Conduction
  • Pb- Free Packages are Available*