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Infineon IRLL024NTRPBFRoHS

Manufacturer
Infineon
MPN
IRLL024NTRPBF
LCSC Part #
C148138
Packaging
SOT-223
Customer #
Key Attributes
MOSFET N-CH 55V 4.4A SOT-223
Datasheetpdf iconInfineon IRLL024NTRPBF
In-Stock: 3,352
3,352 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5013$ 0.50
10+$ 0.3978$ 3.98
30+$ 0.3542$ 10.63
100+$ 0.2992$ 29.92
500+$ 0.2507$ 125.35
1,000+$ 0.2361$ 236.10
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingSOT-223
Drain to Source Voltage55V
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)4.4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.1W
Reverse Transfer Capacitance (Crss@Vds)58pF
RDS(on)80mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)510pF
Gate Charge(Qg)-
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dynamic dv/dt Rating
  • Fast Switching
  • Fully Avalanche Rated
  • Lead-Free