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TOSHIBA TK14G65W,RQ product image
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TOSHIBA TK14G65W,RQRoHS

Manufacturer
TOSHIBA
MPN
TK14G65W,RQ
LCSC Part #
C146269
Packaging
D2PAK
Customer #
Key Attributes
650V 13.7A 3.5V 130W 250mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS
Datasheetpdf iconTOSHIBA TK14G65W,RQ
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.4361$ 1.44
10+$ 1.2001$ 12.00
30+$ 1.0721$ 32.16
100+$ 0.9255$ 92.55
500+$ 0.8607$ 430.35
1,000+$ 0.8314$ 831.40
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTOSHIBA
PackagingD2PAK
Drain to Source Voltage650V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)13.7A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation130W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)250mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
Gate Charge(Qg)35nC@10V
Type-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Features

AI Translation
  • Low drain-source on-resistance: R DS(ON) = 0.22 Ω (typ.) with Super Junction DTMOS structure
  • Easy gate switching control
  • Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA)

Applications

AI Translation
  • Switching Regulator