onsemi NTMFS5C628NLT1G
| Manufacturer | |
| MPN | NTMFS5C628NLT1G |
| LCSC Part # | C145537 |
| Packaging | SO-8FL |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 150A SO-8FL |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 1.7nF | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| RDS(on) | 3.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.6nF | |
| Gate Charge(Qg) | 52nC@10V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free and are RoHS Compliant
In-Stock: 400
400 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.6226 | $ 0.62 |
| 10+ | $ 0.4958 | $ 4.96 |
| 30+ | $ 0.4341 | $ 13.02 |
| 100+ | $ 0.3707 | $ 37.07 |
| 500+ | $ 0.3333 | $ 166.65 |
| 1,500+ | $ 0.3138 | $ 470.70 |
Standard Packaging1500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SO-8FL | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 1.7nF | |
| Current - Continuous Drain(Id) | 150A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| RDS(on) | 3.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.6nF | |
| Gate Charge(Qg) | 52nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Small Footprint (5x6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free and are RoHS Compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



