- Pinout
- Footprint
VISHAY IRL540PBF
| Manufacturer | |
| MPN | IRL540PBF |
| LCSC Part # | C144858 |
| Packaging | ITO-220AB-3 |
| Customer # | |
| Key Attributes | 100V 28A 2V 150W 110mΩ@4V 1 N-channel N-Channel ITO-220AB-3 Single FETs, MOSFETs RoHS |
| Datasheet |  VISHAY IRL540PBF |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | ITO-220AB-3 | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 560pF | |
| Current - Continuous Drain(Id) | 28A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 110mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 64nC@5V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The third-generation power MOSFETs offer designers the best combination of fast switching, rugged device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred in all commercial-industrial applications with power dissipation up to approximately 50 W. Its low thermal resistance and low package cost have earned it widespread recognition across the industry.
Features
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Logic level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- RoHS compliant (directive 2002/95/EC)
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VISHAY | |
| Packaging | ITO-220AB-3 | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 560pF | |
| Current - Continuous Drain(Id) | 28A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 150W | |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF | |
| RDS(on) | 110mΩ@4V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 64nC@5V | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The third-generation power MOSFETs offer designers the best combination of fast switching, rugged device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred in all commercial-industrial applications with power dissipation up to approximately 50 W. Its low thermal resistance and low package cost have earned it widespread recognition across the industry.
Features
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Logic level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- RoHS compliant (directive 2002/95/EC)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |