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VISHAY SI7220DN-T1-E3
| Manufacturer | |
| MPN | SI7220DN-T1-E3 |
| LCSC Part # | C142590 |
| Packaging | DFN-8(3.1x3.1) |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 60V 4.8A DFN-8(3.1x3.1) |
| Datasheet |  VISHAY SI7220DN-T1-E3 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | DFN-8(3.1x3.1) | |
| Current - Continuous Drain(Id) | 4.8A | |
| RDS(on) | 75mΩ@4.5V | |
| Pd - Power Dissipation | 2.6W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 20nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | DFN-8(3.1x3.1) | |
| Current - Continuous Drain(Id) | 4.8A | |
| RDS(on) | 75mΩ@4.5V | |
| Pd - Power Dissipation | 2.6W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 20nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Introduction
Dual N-channel 60 V (D-S) MOSFET in a PowerPAK 1212-8 package. The PowerPAK 1212-8 is a derivative of the PowerPAK SO-8, utilizing the same packaging technology to maximize die area. The exposed die attach pad on the bottom provides a low-resistance thermal path directly to the substrate. Its footprint is comparable to TSOP-6, more than 40% smaller than standard TSSOP-8, and offers more than twice the die capacity of standard TSOP-6. Thermal performance is an order of magnitude better than SO-8 and 20 times better than TSSOP-8, with the ability to utilize the thermal dissipation capability of any PCB heatsink. Compared to TSSOP-8, the reduced junction temperature also improves device efficiency by approximately 20%. The single- and dual-channel versions share the same pinout as the single- and dual-channel PowerPAK SO-8, and the low-profile 1.05 mm height makes it suitable for space-constrained applications.
Features
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET Power MOSFET
- New Low Thermal Resistance PowerPAK Package, 1/3 the Space of An SO-8 While Thermally Comparable
- RoHS COMPLIANT HALOGEN FREE Available
Applications
- Synchronous Rectification
- Primary Side Switch
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.4283 | $ 3.43 |
| 10+ | $ 3.3638 | $ 33.64 |
| 30+ | $ 3.3192 | $ 99.58 |
| 100+ | $ 3.2747 | $ 327.47 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | DFN-8(3.1x3.1) | |
| Current - Continuous Drain(Id) | 4.8A | |
| RDS(on) | 75mΩ@4.5V | |
| Pd - Power Dissipation | 2.6W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V | |
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 20nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | DFN-8(3.1x3.1) | |
| Current - Continuous Drain(Id) | 4.8A | |
| RDS(on) | 75mΩ@4.5V | |
| Pd - Power Dissipation | 2.6W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 60V |
| Type | Description | |
|---|---|---|
| Type | N-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 20nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Introduction
Dual N-channel 60 V (D-S) MOSFET in a PowerPAK 1212-8 package. The PowerPAK 1212-8 is a derivative of the PowerPAK SO-8, utilizing the same packaging technology to maximize die area. The exposed die attach pad on the bottom provides a low-resistance thermal path directly to the substrate. Its footprint is comparable to TSOP-6, more than 40% smaller than standard TSSOP-8, and offers more than twice the die capacity of standard TSOP-6. Thermal performance is an order of magnitude better than SO-8 and 20 times better than TSSOP-8, with the ability to utilize the thermal dissipation capability of any PCB heatsink. Compared to TSSOP-8, the reduced junction temperature also improves device efficiency by approximately 20%. The single- and dual-channel versions share the same pinout as the single- and dual-channel PowerPAK SO-8, and the low-profile 1.05 mm height makes it suitable for space-constrained applications.
Features
- Halogen-free According to IEC 61249-2-21 Available
- TrenchFET Power MOSFET
- New Low Thermal Resistance PowerPAK Package, 1/3 the Space of An SO-8 While Thermally Comparable
- RoHS COMPLIANT HALOGEN FREE Available
Applications
- Synchronous Rectification
- Primary Side Switch
C142590 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |