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VISHAY SI2342DS-T1-GE3 product image
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VISHAY SI2342DS-T1-GE3RoHS

Manufacturer
VISHAY
MPN
SI2342DS-T1-GE3
LCSC Part #
C142553
Packaging
SOT-23
Customer #
Key Attributes
MOSFET N-CH 8V 6A SOT-23
Datasheetpdf iconVISHAY SI2342DS-T1-GE3
In-Stock: 2,562
2,562 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 0.5031$ 0.50
10+$ 0.3911$ 3.91
30+$ 0.344$ 10.32
100+$ 0.284$ 28.40
500+$ 0.2564$ 128.20
1,000+$ 0.2402$ 240.20
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingSOT-23
Drain to Source Voltage8V
Output Capacitance(Coss)385pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)75mΩ@1.2V
Number1 N-channel
Input Capacitance(Ciss)1.07nF
Gate Charge(Qg)6nC@4.5V
TypeN-Channel
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Features

AI Translation
  • Halogen-free According to IEC 61249-2-2 Definition
  • TrenchFET Power MOSFET
  • Low On-Resistance
  • 100% Rg Tested Compliant to RoHS Directive 2002/95/EC

Applications

AI Translation
  • Load Switches for Low Voltage Gate Drive
  • Low Voltage Operating Circuits - Gate Drive 1.2 V to 5 V