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VISHAY SIP32431DR3-T1GE3 product image
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VISHAY SIP32431DR3-T1GE3RoHS

Manufacturer
MPN
SIP32431DR3-T1GE3
LCSC Part #
C141606
Packaging
SOT-363-6
Customer #
Key Attributes
Ultra Low Leakage and Quiescent Current, 1 A Load Switch with Reverse Blocking
Datasheetpdf iconVISHAY SIP32431DR3-T1GE3

Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Power Distribution Switches, Load Drivers
ManufacturerVISHAY
PackagingSOT-363-6
Operating Temperature-40℃~+85℃
FeaturesReverse current blocking;Soft-start;Reverse voltage protection
number of channels1
Control Input LogicActive High
Maximum Continuous Current1.2A
RDS(on)147mΩ
Operating Voltage1.5V~5.5V
TypeHigh Side Switch

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The SiP32431 is an ultra low leakage and quiescent current slew rate controlled high side switch with reverse blocking capability. The switch is of a low ON resistance p -channel MOSFET that supports continuous current up to 1 A. The SiP32431 operates with an input voltage from 1.5 V to 5.5 V. The SiP32431 features low input logic level to interface with low control voltage from microprocessors. This device has a very low operating current, typically 10 pA at 3.3 V power supply. The SiP32431 is available in lead (Pb) -free package options including 6 pin SC70 - 6, and 4 pin TDFN4 1.2 mm×1.6 mm DFN4 packages. The operation temperature range is specified from -40 °C to +85 °C. The SiP32431 compact package options, operation voltage range, and low operating current make it a good fit for battery power applications. The SiP32431 is a p -channel MOSFET power switches designed for high - side slew rate controlled load - switching applications. Once turned on, the slew - rate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. This is accomplished by first elevating the gate voltage of the MOSFET up to its threshold voltage and then by linearly increasing the gate voltage until the MOSFET becomes fully enhanced. At this point, the gate voltage is then quickly increased to the full input voltage to reduce RDS(on) of the MOSFET switch and minimize any associated power losses.

Features

AI Translation
  • 1.5 V to 5.5 V input voltage range
  • No bias power rail required
  • Low on - resistance RDS(on), typically 105 mΩ at 5 V and 135 mΩ at 3 V for TDFN4 1.2 mm×1.6 mm package
  • Typical 147 mΩ at 5 V and 178 mΩ at 3 V for SC70 - 6 package
  • Slew rate controlled turn - on time: 100 μs
  • Ultra low leakage and quiescent current:
    • VIN quiescent current = 0.01 nA
    • VIN shutdown leakage = 0.20 nA
  • Reverse blocking capability
  • SC70 - 6 and TDFN4 1.2 mm×1.6 mm packages

Applications

AI Translation
  • Wireless sensor network
  • Smart meters
  • Wearable
  • Internet of things
  • Portable medical devices
  • Security systems
  • Battery powered devices
  • Portable Instruments
In-Stock: 7,007
7,007 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5869$ 0.59
10+$ 0.4721$ 4.72
30+$ 0.422$ 12.66
100+$ 0.3605$ 36.05
500+$ 0.304$ 152.00
1,000+$ 0.2878$ 287.80
Standard Packaging3000/Full Reel
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