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VISHAY SIRA00DP-T1-GE3 product image
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VISHAY SIRA00DP-T1-GE3RoHS

Manufacturer
VISHAY
MPN
SIRA00DP-T1-GE3
LCSC Part #
C141540
Packaging
PowerPAK-SO-8
Customer #
Key Attributes
MOSFET N-CH 30V 100A PowerPAK-SO-8
Datasheetpdf iconVISHAY SIRA00DP-T1-GE3
In-Stock: 1,131
1,131 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.3305$ 1.33
10+$ 1.2252$ 12.25
30+$ 1.1587$ 34.76
100+$ 1.0923$ 109.23
500+$ 0.9513$ 475.65
1,000+$ 0.9383$ 938.30
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAK-SO-8
Drain to Source Voltage30V
Output Capacitance(Coss)3.32nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)1.35mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)11.7nF
Gate Charge(Qg)220nC@10V
TypeN-Channel
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Introduction

AI Translation

N-Channel 30 V (D-S) MOSFET. PowerPAK is a new package technology developed around the SO-8 footprint. The PowerPAK SO-8 shares the same footprint and pin-out as the standard SO-8, offering a direct drop-in replacement. As a leadless package, it utilizes the entire SO-8 footprint to accommodate a larger die than the standard SO-8. The exposed thermal pad on the bottom of the die provides a direct, low-resistance thermal path to the mounting substrate, and the package height is lower than that of the standard SO-8, making it suitable for space-constrained applications.

Features

AI Translation
  • TrenchFET Gen IV Power MOSFET
  • 100% Rg and UIS Tested

Applications

AI Translation
  • Synchronous Rectification
  • ORing
  • High Power Density DC/DC VRMs and Embedded DC/DC