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VISHAY SI4925BDY-T1-E3
| Manufacturer | |
| MPN | SI4925BDY-T1-E3 |
| LCSC Part # | C141531 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH ARR 30V 7.1A SO-8 |
| Datasheet |  VISHAY SI4925BDY-T1-E3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 7.1A | |
| RDS(on) | 41mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 50nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 7.1A | |
| RDS(on) | 41mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 50nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- Compliant to RoHS Directive 2002/95/EC
- RoHS COMPLIANT
- HALOGEN FREE Available
Applications
AI Translation
- Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
Not available now
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 7.1A | |
| RDS(on) | 41mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V | |
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 50nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | VISHAY | |
| Packaging | SO-8 | |
| Current - Continuous Drain(Id) | 7.1A | |
| RDS(on) | 41mΩ@4.5V | |
| Pd - Power Dissipation | 2W | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Type | P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Number | 2 P-Channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 50nC@10V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | - |
Report an ErrorShow similar products (0) >
Features
AI Translation
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- Compliant to RoHS Directive 2002/95/EC
- RoHS COMPLIANT
- HALOGEN FREE Available
Applications
AI Translation
- Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
C141531 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |