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VISHAY SI7900AEDN-T1-E3 product image
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VISHAY SI7900AEDN-T1-E3RoHS

Manufacturer
MPN
SI7900AEDN-T1-E3
LCSC Part #
C141513
Packaging
PowerPAK1212-8
Customer #
Key Attributes
8.5A 36mΩ@1.8V 3.1W 900mV 2 N-Channel PowerPAK1212-8 FET, MOSFET Arrays RoHS
Datasheetpdf iconVISHAY SI7900AEDN-T1-E3
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerVISHAY
PackagingPowerPAK1212-8
ConfigurationCommon Drain
Current - Continuous Drain(Id)8.5A
RDS(on)36mΩ@1.8V
Pd - Power Dissipation3.1W
Gate Threshold Voltage (Vgs(th))900mV
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)16nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Features

AI Translation
  • Halogen-free option available
  • TrenchFET Power MOSFET: 1.8 V rated voltage
  • New PowerPak package
  • Low thermal resistance RthJC
  • Low profile, height only 1.07 mm
  • 3000 V ESD protection
  • RoHS compliant

Applications

AI Translation
  • 1 - 2 cell Li-ion battery protection switch