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onsemi NTS2101PT1GRoHS

Manufacturer
onsemi
MPN
NTS2101PT1G
LCSC Part #
C140583
Packaging
SOT-323
Customer #
Key Attributes
MOSFET P-CH 8V 1.4A SOT-323
Datasheetpdf icononsemi NTS2101PT1G
In-Stock: 23,660
23,660 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.164$ 0.82
50+$ 0.132$ 6.60
150+$ 0.1161$ 17.42
500+$ 0.1041$ 52.05
3,000+$ 0.0779$ 233.70
6,000+$ 0.0731$ 438.60
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingSOT-323
Configuration-
Drain to Source Voltage8V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)1.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation330mW
Reverse Transfer Capacitance (Crss@Vds)82pF
RDS(on)117mΩ@1.8V
Number1 P-Channel
Input Capacitance(Ciss)640pF
Gate Charge(Qg)6.4nC@5V
TypeP-Channel
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Features

AI Translation
  • Leading trench technology for low RDS(on), extending battery life
  • Rated voltage -1.8 V, suitable for low-voltage gate drive
  • SC-70 surface mount, small footprint (2 x 2 mm)
  • Available in lead-free package

Applications

AI Translation
  • High-side load switch
  • Charging circuits
  • Single-cell battery applications such as mobile phones, digital cameras, and PDAs