onsemi NTGD4167CT1G
| Manufacturer | |
| MPN | NTGD4167CT1G |
| LCSC Part # | C140582 |
| Packaging | TSOP-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 30V 2.6A TSOP-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | TSOP-6 | |
| Current - Continuous Drain(Id) | 2.6A | |
| RDS(on) | 300mΩ@2.5V | |
| Pd - Power Dissipation | 900mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 419pF | |
| Gate Charge(Qg) | 6nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 51pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Complementary N−Channel and P−Channel MOSFET
- Small Size (3 x 3 mm) Dual TSOP−6 Package
- Leading Edge Trench Technology for Low On Resistance
- Reduced Gate Charge to Improve Switching Response
- Independently Connected Devices to Provide Design Flexibility
- This is a Pb−Free Device
Applications
AI Translation
- DC−DC Conversion Circuits
- Load/Power Switching with Level Shift
In-Stock: 2,780
2,780 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.4492 | $ 0.45 |
| 10+ | $ 0.3552 | $ 3.55 |
| 30+ | $ 0.313 | $ 9.39 |
| 100+ | $ 0.2627 | $ 26.27 |
| 500+ | $ 0.2271 | $ 113.55 |
| 1,000+ | $ 0.2125 | $ 212.50 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | onsemi | |
| Packaging | TSOP-6 | |
| Current - Continuous Drain(Id) | 2.6A | |
| RDS(on) | 300mΩ@2.5V | |
| Pd - Power Dissipation | 900mW | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Drain to Source Voltage | 30V | |
| Type | N-Channel + P-Channel | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 419pF | |
| Gate Charge(Qg) | 6nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 51pF |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Complementary N−Channel and P−Channel MOSFET
- Small Size (3 x 3 mm) Dual TSOP−6 Package
- Leading Edge Trench Technology for Low On Resistance
- Reduced Gate Charge to Improve Switching Response
- Independently Connected Devices to Provide Design Flexibility
- This is a Pb−Free Device
Applications
AI Translation
- DC−DC Conversion Circuits
- Load/Power Switching with Level Shift
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



