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TI TXS02612RTWRRoHS

Manufacturer
TI
MPN
TXS02612RTWR
LCSC Part #
C140276
Packaging
WQFN-24-EP(4x4)
Customer #
Key Attributes
SDIOPORTEXPANDERWITHVOLTAGE-LEVELTRANSLATION
Datasheetpdf iconTI TXS02612RTWR
In-Stock: 17,663
17,663 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7977$ 0.80
10+$ 0.6401$ 6.40
30+$ 0.5605$ 16.82
100+$ 0.4826$ 48.26
500+$ 0.4354$ 217.70
1,000+$ 0.4111$ 411.10
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Interface/Specialized
ManufacturerTI
PackagingWQFN-24-EP(4x4)
Interface-
Voltage - Supply1.1V~3.6V
Features-
Operating Temperature-40℃~+85℃
Supply Current24uA
Quiescent Supply Current12uA;24uA
Data Rate120Mbps
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Introduction

AI Translation

The TXS02612 is designed to interface the cell phone baseband with external SDIO peripherals. The device includes a 6-channel SPDT switch with voltage-level translation capability. This allows a single SDIO port to be interfaced with two SDIO peripherals. The TXS02612 has three separate supply rails that operate over the full range of 1.1 V to 3.6 V. This allows the baseband and SDIO peripherals to operate at different supply voltages if required.

Features

AI Translation
  • 6-to-12 Demultiplexer/Multiplexer Allows SDIO Port Expansion
  • Built-in Level Translator Eliminates Voltage Mismatch Between Baseband and SD Card or SDIO Peripheral
  • VCCA, VCCB0, and VCCB1 Each Operate Over Full 1.1-V to 3.6-V Range
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance A Port 2000-V Human-Body Model (A114-B) – 100-V Machine Model (A115-A) 1500-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD Performance (B Port)