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TI UCC27611DRVTRoHS

Manufacturer
MPN
UCC27611DRVT
LCSC Part #
C139645
Packaging
WSON-6-EP(2x2)
Customer #
Key Attributes
UCC27611 5-V, 4-A to 6-A Low Side GaN Driver
Datasheetpdf iconTI UCC27611DRVT
In-Stock: 954
954 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.834$ 1.83
10+$ 1.628$ 16.28
30+$ 1.4837$ 44.51
250+$ 1.3508$ 337.70
500+$ 1.2892$ 644.60
1,000+$ 1.2648$ 1264.80
Standard Packaging250/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerTI
PackagingWSON-6-EP(2x2)
Input Logic Level - Low900mV~1.3V
Low Level Delay Time14ns
High Level Delay Time14ns
Quiescent Current-
Input Logic Level - High1.85V~2.25V
Operating Temperature-40℃~+140℃
Voltage - Supply4V~18V
Driven ConfigurationLow Side
Current - Output Low(IOL)6A
Rise Time5ns
Fall Time5ns
FeaturesUnder Voltage Protection;Enable shutdown;Interleaved conduction protection
Current - Output High(IOH)4A
Load TypeMOSFET

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging250
Sales UnitPiece

Introduction

AI Translation

The UCC27611 is a single-channel, high-speed, gate driver optimized for 5-V drive, specifically addressing enhancement mode GaN FETs. The drive voltage VREF is precisely controlled by internal linear regulator to 5 V. The UCC27611 offers asymmetrical rail-to-rail peak current drive capability with 4-A source and 6-A sink. Split output configuration allows individual turnon and turnoff time optimization depending on FET. Package and pinout with minimum parasitic inductances reduce the rise and fall time and limit the ringing. Additionally, the short propagation delay with minimized tolerances and variations allows efficient operation at high frequencies. The 1-Ω and 0.35-Ω resistance boosts immunity to hard switching with high slew rate dV and dt. The independence from VDD input signal thresholds ensure TTL and CMOS low-voltage logic compatibility. For safety reason, when the input pins are in a floating condition, the internal input pullup and pulldown resistors hold the output LOW. Internal circuitry on VREF pin provides an undervoltage lockout function that holds output LOW until VREF supply voltage is within operating range. UCC27611 is offered in a small 2.00 mm × 2.00 mm SON-6 package (DRV) with exposed thermal and ground pad that improves the package power-handling capability. The UCC27611 operates over wide temperature range from -40°C to 140°C.

Features

AI Translation
  • Enhancement Mode Gallium Nitride FETs (eGANFETs)
  • 4-V to 18-V Single Supply Range VDD Range
  • Drive Voltage VREF Regulated to 5 V
  • 4-A Peak Source and 6-A Peak Sink Drive Current
  • 1-Ω and 0.35-Ω Pullup and Pulldown Resistance (Maximize High Slew-Rate dV and dt Immunity)
  • Split Output Configuration (Allows Turnon and Turnoff Optimization for Individual FETs)
  • Fast Propagation Delays (14-ns Typical)
  • Fast Rise and Fall Times (9-ns and 5-ns Typical)
  • TTL and CMOS Compatible Inputs (Independent of Supply Voltage Allow Easy Interface-to-Digital and Analog Controllers)
  • Dual-Input Design Offering Drive Flexibility (Both Inverting and Noninverting Configurations)
  • Output Held Low When Inputs Are Floating
  • VDD Under Voltage Lockout (UVLO)
  • Optimized Pinout Compatible With eGANFET Footprint for Easy Layout
  • 2.00 mm × 2.00 mm SON-6 Package With Exposed Thermal and Ground Pad, (Minimized Parasitic Inductances to Reduce Gate Ringing)
  • Operating Temperature Range of -40°C to 140°C

Applications

AI Translation
  • Switch-Mode Power Supplies
  • DC-to-DC Converters
  • Synchronous Rectification
  • Solar Inverters
  • Motor Control
  • UPS
  • Envelope Tracking Power Supplies