TI CSD17311Q5
| Manufacturer | |
| MPN | CSD17311Q5 |
| LCSC Part # | C139640 |
| Packaging | VSON-8-EP(5x6) |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 100A VSON-8-EP(5x6) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | VSON-8-EP(5x6) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 2.26nF | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 3.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 3.1mΩ@3V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.28nF | |
| Gate Charge(Qg) | 31nC@4.5V | |
| Type | N-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Features
AI Translation
- Optimized for 5V Gate Drive
- Ultra Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm×6-mm Plastic Package
Applications
AI Translation
- Notebook Point-of-Load
- Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
In-Stock: 110
110 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.7176 | $ 1.72 |
| 10+ | $ 1.4543 | $ 14.54 |
| 30+ | $ 1.2886 | $ 38.66 |
| 100+ | $ 1.1196 | $ 111.96 |
| 500+ | $ 1.0432 | $ 521.60 |
| 1,000+ | $ 1.0091 | $ 1009.10 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TI | |
| Packaging | VSON-8-EP(5x6) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 2.26nF | |
| Current - Continuous Drain(Id) | 100A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 3.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 3.1mΩ@3V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.28nF | |
| Gate Charge(Qg) | 31nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Features
AI Translation
- Optimized for 5V Gate Drive
- Ultra Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm×6-mm Plastic Package
Applications
AI Translation
- Notebook Point-of-Load
- Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
C139640 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



