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ST MJD122T4 product image
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ST MJD122T4RoHS

Manufacturer
ST
MPN
MJD122T4
LCSC Part #
C138774
Packaging
TO-252-2(DPAK)
Customer #
Key Attributes
100V 1000 NPN 8A TO-252-2(DPAK) Single Bipolar Transistors RoHS
Datasheetpdf iconST MJD122T4

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerST
PackagingTO-252-2(DPAK)
Vbe Saturation(VBE(sat))4.5V
Current - Collector Cutoff10uA
Vbe On(VBE(on))2.8V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation20W
typeNPN
Current - Collector(Ic)8A
Operating Temperature-
Vce Saturation(VCE(sat))4V
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

These devices are manufactured using planar technology with a "base island" layout and monolithic Darlington configuration. The resulting transistors exhibit extremely high gain performance and very low saturation voltage.

Features

AI Translation
  • Low collector-emitter saturation voltage
  • Integrated anti-parallel collector-emitter diode

Applications

AI Translation
  • General-purpose linear and switching applications
In-Stock: 2,565
2,565 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.4624$ 2.31
50+$ 0.3743$ 18.72
150+$ 0.3365$ 50.48
500+$ 0.2894$ 144.70
2,500+$ 0.2684$ 671.00
5,000+$ 0.2559$ 1279.50
Standard Packaging2500/Full Reel
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