NCE NCE4614
| Manufacturer | NCEAsian Brands |
| MPN | NCE4614 |
| LCSC Part # | C136092 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 40V 8A SOP-8 |
| Datasheet |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | SOP-8 | |
| Output Capacitance(Coss) | 112pF;100pF | |
| Pd - Power Dissipation | 2W | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF;65pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 415pF;520pF | |
| Gate Charge(Qg) | 12nC;13nC | |
| Vgs | ±20V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | SOP-8 | |
| Output Capacitance(Coss) | 112pF;100pF | |
| Pd - Power Dissipation | 2W | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 8A | |
| Operating Temperature - | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF;65pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 415pF;520pF | |
| Gate Charge(Qg) | 12nC;13nC | |
| Vgs | ±20V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Features
AI Translation
- N-Channel VDS = 40V, ID = 8A
- RDS(ON) < 19mΩ @ VGS = 10V
- RDS(ON) < 29mΩ @ VGS = 4.5V
- P-Channel VDS = -40V, ID = -7A
- RDS(ON) < 35mΩ @ VGS = -10V
- RDS(ON) < 45mΩ @ VGS = -4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
In-Stock: 15
15 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.3261 | $ 1.63 |
| 50+ | $ 0.2508 | $ 12.54 |
| 150+ | $ 0.2185 | $ 32.78 |
| 500+ | $ 0.1782 | $ 89.10 |
| 2,500+ | $ 0.1603 | $ 400.75 |
| 4,000+ | $ 0.1495 | $ 598.00 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | SOP-8 | |
| Output Capacitance(Coss) | 112pF;100pF | |
| Pd - Power Dissipation | 2W | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF;65pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 415pF;520pF | |
| Gate Charge(Qg) | 12nC;13nC | |
| Vgs | ±20V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | SOP-8 | |
| Output Capacitance(Coss) | 112pF;100pF | |
| Pd - Power Dissipation | 2W | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 8A | |
| Operating Temperature - | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF;65pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 415pF;520pF | |
| Gate Charge(Qg) | 12nC;13nC | |
| Vgs | ±20V | |
| Type | N-Channel + P-Channel |
Report an ErrorShow similar products (0) >
Introduction
AI Translation
The NCE4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Features
AI Translation
- N-Channel VDS = 40V, ID = 8A
- RDS(ON) < 19mΩ @ VGS = 10V
- RDS(ON) < 29mΩ @ VGS = 4.5V
- P-Channel VDS = -40V, ID = -7A
- RDS(ON) < 35mΩ @ VGS = -10V
- RDS(ON) < 45mΩ @ VGS = -4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
C136092 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
