ISSI IS46TR16640ED-15HBLA1
| Manufacturer | |
| MPN | IS46TR16640ED-15HBLA1 |
| LCSC Part # | C1351997 |
| Packaging | TWBGA-96(9x13) |
| Customer # | |
| Key Attributes | 1Gbit 1.425V~1.575V 800MHz DDR3 SDRAM TWBGA-96(9x13) Memory (ICs) RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | ISSI | |
| Packaging | TWBGA-96(9x13) | |
| Refresh Current | - | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 1.425V~1.575V | |
| Operating temperature | -40℃~+95℃ | |
| Clock Frequency | 800MHz | |
| Features | Auto self-refresh;On-chip error correction code;Asynchronous reset function;Dynamic on-chip termination;Write leveling function;Auto precharge function;ZQ calibration function;Data mask function | |
| Memory Format | DDR3 SDRAM | |
| Current - Supply | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 190 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Standard Voltage: VDD and V_DDO = 1.5 V ± 0.075 V
- High speed data transfer rates with system frequency up to 800 MHz
- 8 internal banks for concurrent operation
- 8n-bit pre-fetch architecture
- Programmable CAS Latency
- Programmable Additive Latency: 0, CL - 1, CL - 2
- Programmable CAS WRITE latency (CWL) based on tCK
- Programmable Burst Length: 4 and 8
- Programmable Burst Sequence: Sequential or Interleave
- BL switch on the fly
- Auto Self Refresh(ASR)
- Self Refresh Temperature(SRT)
- Single bit error correction (per 64 - bits)
- Refresh Interval: 7.8 μs (8192 cycles/64 ms) TC = -40 ℃ to 85 ℃; 3.9 μs (8192 cycles/32 ms) Tc = 85 ℃ to 105 ℃; 1.95 μs (8192 cycles/16 ms) TC = 105 ℃ to 125 ℃
- Partial Array Self Refresh
- Asynchronous RESET pin
- TDQS (Termination Data Strobe) supported (x8 only)
- OCD (Off - Chip Driver Impedance Adjustment)
- Dynamic ODT (On - Die Termination)
- Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
- Write Leveling
- Operating temperature: Automotive, A1 TC = -40 ℃ to +95 ℃; Automotive, A2 TC = -40 ℃ to +105 ℃; Automotive, A3 (Tc = -40 ℃ to +125 ℃)
Out of Stock
Notify Me
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 12.1005 | $ 12.10 |
| 200+ | $ 4.6829 | $ 936.58 |
| 500+ | $ 4.5192 | $ 2259.60 |
| 1,000+ | $ 4.4365 | $ 4436.50 |
Standard Packaging190/Full Tray | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Integrated Circuits (ICs)/Memory/Memory (ICs) | |
| Manufacturer | ISSI | |
| Packaging | TWBGA-96(9x13) | |
| Refresh Current | - | |
| Memory Size | 1Gbit | |
| Voltage - Supply | 1.425V~1.575V | |
| Operating temperature | -40℃~+95℃ | |
| Clock Frequency | 800MHz | |
| Features | Auto self-refresh;On-chip error correction code;Asynchronous reset function;Dynamic on-chip termination;Write leveling function;Auto precharge function;ZQ calibration function;Data mask function | |
| Memory Format | DDR3 SDRAM | |
| Current - Supply | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 190 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Standard Voltage: VDD and V_DDO = 1.5 V ± 0.075 V
- High speed data transfer rates with system frequency up to 800 MHz
- 8 internal banks for concurrent operation
- 8n-bit pre-fetch architecture
- Programmable CAS Latency
- Programmable Additive Latency: 0, CL - 1, CL - 2
- Programmable CAS WRITE latency (CWL) based on tCK
- Programmable Burst Length: 4 and 8
- Programmable Burst Sequence: Sequential or Interleave
- BL switch on the fly
- Auto Self Refresh(ASR)
- Self Refresh Temperature(SRT)
- Single bit error correction (per 64 - bits)
- Refresh Interval: 7.8 μs (8192 cycles/64 ms) TC = -40 ℃ to 85 ℃; 3.9 μs (8192 cycles/32 ms) Tc = 85 ℃ to 105 ℃; 1.95 μs (8192 cycles/16 ms) TC = 105 ℃ to 125 ℃
- Partial Array Self Refresh
- Asynchronous RESET pin
- TDQS (Termination Data Strobe) supported (x8 only)
- OCD (Off - Chip Driver Impedance Adjustment)
- Dynamic ODT (On - Die Termination)
- Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
- Write Leveling
- Operating temperature: Automotive, A1 TC = -40 ℃ to +95 ℃; Automotive, A2 TC = -40 ℃ to +105 ℃; Automotive, A3 (Tc = -40 ℃ to +125 ℃)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Type | Details |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

