TI TLC271CP

The TLC271 operational amplifier combines a wide range of input offset voltage grades with low offset voltage drift and high input impedance. In addition, the TLC271 offers a bias-select mode that allows the user to select the best combination of power dissipation and ac performance for a particular application. These devices use silicon-gate LinCMOS technology, which provides offset voltage stability far exceeding the stability available with conventional metal-gate processes. Using the bias-select option, these cost-effective devices can be programmed to span a wide range of applications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV) low-offset version. The extremely high input impedance and low bias currents, in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good choice for new state-of-the-art designs as well as for upgrading existing designs. In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers, without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. The devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and inaccessible battery-powered applications. The common-mode input voltage range includes the negative rail. A wide range of packaging options is available, including small-outline and chip-carrier versions for high-density system applications. The device inputs and output are designed to withstand -100 mA surge currents without sustaining latch-up. The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric performance.

• Input offset voltage drift: typically 0.1 μV/month, including first 30 days
• Wide supply voltage range:
  • 0°C to 70°C: 3 V to 16 V
  • -40°C to 85°C: 4 V to 16 V
  • -55°C to 125°C: 5 V to 16 V
• Single-supply operation
• Common-mode input voltage range extends below the negative rail (C-suffix and I-suffix types)
• Low noise: typically 25 nV/√Hz at 1 kHz (high-bias mode)
• Output voltage range includes negative rail
• High input impedance: typically 10¹² Ω
• ESD protection circuit
• Small outline package options with tape-and-reel availability
• Latch-up resistant design
• High-bias mode: low offset voltage drift, high input impedance, low noise, unity-gain bandwidth typically greater than 1 MHz
• Medium-bias mode: low offset voltage drift, high input impedance, low noise, speed comparable to general-purpose bipolar devices at a fraction of the power consumption
• Low-bias mode: low offset voltage drift, high input impedance, ultra-low power consumption, high differential voltage gain

• Sensor interface
• Analog computation
• Amplifier modules
• Active filters
• Signal buffering
• Remote and hard-to-reach battery-powered applications
• High-density system applications