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VISHAY IRF530PBFRoHS

Manufacturer
VISHAY
MPN
IRF530PBF
LCSC Part #
C134160
Packaging
ITO-220AB-3
Customer #
Key Attributes
MOSFET N-CH 100V 14A ITO-220AB-3
Datasheetpdf iconVISHAY IRF530PBF
In-Stock: 1,032
1,032 In stock, ships now
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Once stock is depleted, this item will be marked as "Out of Stock."
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QtyUnit PriceTotal Amount
1+$ 0.5143$ 0.51
10+$ 0.4656$ 4.66
50+$ 0.4137$ 20.69
100+$ 0.3894$ 38.94
500+$ 0.3748$ 187.40
1,000+$ 0.3666$ 366.60
Standard Packaging50/Full Tube

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingITO-220AB-3
Configuration-
Drain to Source Voltage100V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation88W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)670pF
Gate Charge(Qg)26nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Third generation Power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Dynamic dV/dt Rating
  • Repetitive Avalanche Rated
  • 175 °C Operating Temperature
  • Fast Switching
  • Ease of Paralleling
  • Simple Drive Requirements
  • Compliant to RoHS Directive 2002/95/EC