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TI CSD19537Q3TRoHS

Manufacturer
TI
MPN
CSD19537Q3T
LCSC Part #
C134143
Packaging
VSONP-8(3.3x3.3)
Customer #
Key Attributes
MOSFET N-CH 100V 53A VSONP-8(3.3x3.3)
Datasheetpdf iconTI CSD19537Q3T
In-Stock: 13
13 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.3939$ 1.39
10+$ 1.1878$ 11.88
30+$ 1.0726$ 32.18
250+$ 0.8503$ 212.58
500+$ 0.7935$ 396.75
1,000+$ 0.7675$ 767.50
Standard Packaging250/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTI
PackagingVSONP-8(3.3x3.3)
Drain to Source Voltage100V
Output Capacitance(Coss)326pF
Current - Continuous Drain(Id)53A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)17.3pF
RDS(on)12.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.68nF
Gate Charge(Qg)21nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging250
Sales UnitPiece

Introduction

AI Translation

This 100V 12.1mΩ SON 3.3mm x 3.3mm power MOSFET is designed to minimize losses in power conversion applications.

Features

AI Translation
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free terminal plating
  • RoHS compliant
  • Halogen-free
  • Small Outline No-lead (SON) 3.3mm x 3.3mm plastic package

Applications

AI Translation
  • Primary-side isolated converter
  • Motor control