onsemi FOD8342TR2
| Manufacturer | |
| MPN | FOD8342TR2 |
| LCSC Part # | C132695 |
| Packaging | SOP-6-6.8mm |
| Customer # | |
| Key Attributes | 3.0 A Output Current, High Speed Gate Drive Optocoupler in Stretched Body SOP 6-Pin |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Isolators/Isolators - Gate Drivers | |
| Manufacturer | onsemi | |
| Packaging | SOP-6-6.8mm | |
| Power Dissipation | 500mW | |
| Features | Under-voltage lockout | |
| Output Current | 3A | |
| Data Rate | - | |
| Operating Temperature | -40℃~+100℃ | |
| Reverse Voltage | 5V | |
| Voltage - Supply | 10V~30V | |
| Forward Current(If) | 16mA | |
| CMTI(kV/us) | 50kV/us | |
| Number of Channels | 1 | |
| Input threshold current | 7.5mA | |
| Propagation Delay(tpd) | 210ns;210ns | |
| Voltage - Forward(Vf) | 1.5V | |
| Isolation Voltage(Vrms) | 5kV | |
| Input Type | DC |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
The FOD8342 series is a 3.0 A output current gate drive optocoupler, capable of driving medium-power IGBT/ MOSFETs. It is ideally suited for fast-switching driving of power IGBT and MOSFET used in motor-control inverter applications, and high-performance power systems. The FOD8342 series utilizes stretched body package to achieve 8 mm creepage and clearance distances (FOD8342T), and optimized IC design to achieve reliably high-insulation voltage and high-noise immunity. The FOD8342 series consists of an Aluminum Gallium Arsenide (AlGaAs) Light-Emitting Diode (LED) optically coupled to an integrated circuit with a high-speed driver for push-pull MOSFET output stage. The device is housed in a stretched body, 6-pin, small outline, plastic package.
Features
- FOD8342T - 8 mm Creepage and Clearance Distance, and 0.4 mm Insulation Distance to Achieve Reliable and High-Voltage Insulation
- 3.0 A Peak Output Current Driving Capability for Medium-Power IGBT/MOSFET
- Use of P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to Supply Rail
- 20 kV/μs Minimum Common Mode Rejection
- Wide Supply Voltage Range: 10 V to 30 V
- Fast Switching Speed Over Full Operating Temperature Range
- 210 ns Maximum Propagation Delay
- 65 ns Maximum Pulse Width Distortion
- Under-Voltage Lockout (UVLO) with Hysteresis
- Extended Industrial Temperate Range: -40°C to 100°C
- Safety and Regulatory Approvals:
- UL1577, 5,000 V RMS for 1 Minute
- DIN EN/IEC60747-5-5, 1,140V Peak Working Insulation Voltage
Applications
- AC and Brushless DC Motor Drives
- Industrial Inverter
- Uninterruptible Power Supply
- Induction Heating
- Isolated IGBT/Power MOSFET Gate Drive
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.0101 | $ 1.01 |
| 10+ | $ 0.7958 | $ 7.96 |
| 30+ | $ 0.6886 | $ 20.66 |
| 100+ | $ 0.583 | $ 58.30 |
| 500+ | $ 0.4775 | $ 238.75 |
| 1,000+ | $ 0.4434 | $ 443.40 |
Standard Packaging1000/Full Reel | ||
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541490000 |
| USHTS | 8541491010 |
| TARIC | 8541490000 |
| Type | Details |
|---|---|
| CAHTS | 8541490090 |
| BRHTS | 85414900 |
| INHTS | 85414900 |
| MXHTS | 8541.40.02 |



